data sheet semiconductor http://www.yeashin.com 1 rev.01 20140624 MBRL1040CT~mbrl10200ct 10a schottky b a rrie r re ctifier fe a t ures ?e s c ho ttky barrier chip ?e guard ring for t r ansien t pro t ection ?e high curren t capability , low forw a r d ?e l o w re v e rse le akage curren t ?e high sur ge curr ent cap ability ?e plasti c ma terial h a s ul flammability c l assi fi cati on 9 4 v- o ?e high temper atur e so ldering : 260 o c / 10 se cond s at ter m inals ?e pb free p r odu ct at av ailable : 99% sn abov e meet ro hs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se : to-2 20ab m o lded pl asti c ?e termina l s: plate d lead s solderab le per mil-std-750, me thod 2026 ?e polari ty : as mar k ed on body ?e m oun ting po sitio n : a n y ?e mar k ing : ty pe number maximu m ra tin g s an d electric a l charac teristic s @t a = 25 c u n l ess ot her w ise specifi ed single p hase, hal f w a v e , 60hz, re sisti v e or inductiv e load . for cap a ci tiv e load, dera t e curr ent by 20%. to-220 ab unit:inch(mm) characterist i c s y m b o l 1040ct peak repet i tiv e r e v e rse volt age w o r k i n g p e ak re ve r s e v o l t a g e dc bl ocki ng vo l t age v rrm v rw m v r 40 60 100 150 rm s re ve r s e v o lta g e v r(rms ) 70 a verage rectif ied output current @ t c = 90c if 10 non-repeti ti v e pe ak for w a r d su r g e cur r e nt 8.3ms s i ngle ha lf sine- w av e superimposed on r a ted l o ad (j edec method) if sm for w a r d vo l t age @ i f = 10.0 a v f 0.52 0.95 1.05 peak rev e rse current @t a = 25c i rm 0.3 0.2 oper ati ng and sto r age tempe r atur e range t j , t st g -55 ~ +150 units volts volts volts 200 140 mbrl mbrl 45 31.5 0.5 0.58 amps ma amps mbrl mbrl mbrl mbrl 1045ct 1060ct 10100ct 10150ct 10200ct 28 42 105 150 0.72 o c .419(10.66) .387(9.85) .134(3.40) min. .055(1.40) .039(1.00) .039(1.00) .019(0.50) .1(2.54) .1(2.54) .59(15.00) .50(12.70) .177(4.50) max. .624(15.87) .584(13.93) .269(6.85) .226(5.75) .196(5.00) .163(4.16) .059(1.50) .039(1.00) .025(0.65) max.
http://www.yeashin.com 2 rev.01 20140624 MBRL1040CT~mbrl10200ct device characteristics fig.2- typical instantaneous forward characteristic fig.1- forward current derating curve fig.3- typical reverse characteristic instantaneous reverse current, milamperes 0 100 200 300 100 10 1.0 0.1 0.01 t = 100 c c o t=75c c o t=25c c o peak forward surge current, fig.4- maximum non-repetitive surge current no. of cycle at 60hz 150 120 110 90 70 50 30 20 10 1 2 5 10 20 50 100 percent of peak reverse voltage average forward current case temperature, c o 0 20 40 60 0 80 100 instantaneous forward current amperes instantaneous forward voltage, volts .4 .5 .6 .7 .8 .9 1.0 1.1 40 10 2 1.0 .8 .6 .4 .2 .1 t = 25 c pulse width = 300 s 1% duty cycle j o 100v 40,45v 150 80 60v 150v 200v 10 8 6 4 2
marking information http ?g // www . y ea shin.com ? yeashin technology co., ltd. mb rl 1 0 xxct xxxx line 1: ys logo and date code the first half of line 1: ys logo the second half of line 1 : yy ww: year, yy ww : week. line 2 : device name and package type mbr : schottky barrier rectifier xx : 10 ampere series product. 10 xx : the peak reverse voltage of product. line 3 : device structure symbol 1 0 l : low vf
?Z packing ? dimension ? qty picture ?? bag/tube / ? 527mm*33mm*7mm 50 pcs inner box ? 555mm*140mm*55mm 2000 pcs carton 575mm*285mm *155mm 8000 pcs to/ito220 ? yeashin technology co., ltd. http ?g //www.yeashin.com
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